document number: 94068 for technical questions within your region, please contact one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 2 x 15 a vs-hfa30pa60cpbf vishay semiconductors features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa30pa60cpbf is a state of the art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techni ques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 600 v and 15 a per leg continuous current, the vs-hfa30pa60cpbf is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low valu es of peak recovery current (i rrm ) and does not exhibit any tendency to ?snap-off? during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the he xfred vs-hfa30pa60cpbf is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary package to-247ac i f(av) 2 x 15 a v r 600 v v f at i f 1.7 v t rr (typ.) 19 ns t j max. 150 c diode variation single die to-247ac base common cathode common cathode 2 2 13 anode 1 anode 2 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current per leg i f t c = 100 c 15 a per device 30 single pulse forward current i fsm 150 maximum repetitive forward current i frm 60 maximum power dissipation p d t c = 25 c 74 w t c = 100 c 29 operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94068 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa30pa60cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 15 a electrical specifications per leg (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 15 a see fig. 1 -1.31.7 i f = 30 a - 1.5 2.0 i f = 15 a, t j = 125 c - 1.2 1.6 maximum reverse leakage current i rm v r = v r rated see fig. 2 -1.010 a t j = 125 c, v r = 0.8 x v r rated - 400 1000 junction capacitance c t v r = 200 v see fig. 3 - 25 50 pf series inductance l s measured lead to lead 5 mm from package body - 12 - nh dynamic recovery characteristics per leg (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 19 - ns t rr1 t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 200 v -4260 t rr2 t j = 125 c - 70 120 peak recovery current see fig. 6 i rrm1 t j = 25 c - 4.0 6.0 a i rrm2 t j = 125 c - 6.5 10 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 80 180 nc q rr2 t j = 125 c - 220 600 peak rate of fall of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 250 - a/s di (rec)m /dt2 t j = 125 c - 160 - thermal-mechanical specifications per leg parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063? from case (1.6 mm) for 10 s - - 300 c junction to case, single leg conduction r thjc --1.7 k/w junction to case, both legs conducting - - 0.85 thermal resistance, junction to ambient r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.25 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to -247ac (jedec) hfa30pa60c
document number: 94068 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa30pa60cpbf hexfred ? ultrafast soft recovery diode, 2 x 15 a vishay semiconductors fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) fig. 3 - typical j unction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) i f - instantaneous forward current (a) v fm - forward voltage drop (v) 1.0 1.2 1.4 1. 8 2.2 1.6 2.0 2.4 1 10 100 9406 8 _01 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 100 200 300 500 400 600 0.01 0.1 1 10 100 1000 10 000 9406 8 _02 t j = 125 c t j = 150 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 0 100 200 500 400 300 600 10 100 9406 8 _03 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response 9406 8 _04 single p u lse (thermal response) p dm t 2 t 1 notes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94068 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa30pa60cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 15 a fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) t rr (ns) di f /dt (a/s) 100 1000 0 100 8 0 20 40 60 9406 8 _05 i f = 30 a i f = 15 a i f = 5.0 a v r = 200 v t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 25 20 5 10 15 9406 8 _06 v r = 200 v t j = 125 c t j = 25 c i f = 30 a i f = 15 a i f = 5.0 a q rr (nc) di f /dt (a/s) 100 1000 0 8 00 400 600 200 9406 8 _07 i f = 30 a i f = 15 a i f = 5.0 a v r = 200 v t j = 125 c t j = 25 c di (rec)m /dt (a/s) di f /dt (a/s) 100 1000 100 10 000 1000 9406 8 _0 8 i f = 30 a i f = 15 a i f = 5.0 a v r = 200 v t j = 125 c t j = 25 c
document number: 94068 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa30pa60cpbf hexfred ? ultrafast soft recovery diode, 2 x 15 a vishay semiconductors fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94068 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vs-hfa30pa60cpbf vishay semiconductors hexfred ? ultrafast soft recove ry diode, 2 x 15 a ordering information table 1 - v ishay semicond u ctors prod u ct 2 - hexfred ? family 3 - electron irradiated 4 -c u rrent rating (30 = 30 a) 5 - pa = to-247ac device code 5 1 3 2 4 6 7 8 hf vs- a 30 pa 60 c pbf 6 7 - circuit configuration c = common cathode 8 - pbf = lead (pb)-free - v oltage rating: (60 = 600 v ) links to related documents dimensions www.vishay.com/doc?95223 part marking information www.vishay.com/doc?95226 spice model www.vishay.com/doc?95182
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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